Abstract
We report a new fabrication process for Er-doped glass ridge waveguides. The process does not require etching of an Er-doped film in defining the lateral dimension of a waveguide, but involves a lift-off process using polyimide as a sacrificial layer. An Er-doped soda-lime silicate glass film (1.5 micrometer thick) was deposited at 350 degrees Celsius using a collimated sputtering technique. Conventional sputtering techniques have been known to be incompatible with a lift-off process. The collimated sputtering, however, allowed us easy lift-off of Er-doped films, and produced well-defined ridges with smooth surface profiles as confirmed by scanning electron microscope analysis. Guided mode profiles were measured at 1.3 micrometer wavelength and compared with the simulation results.
| Original language | English |
|---|---|
| Pages (from-to) | 450-458 |
| Number of pages | 9 |
| Journal | Proceedings of SPIE - The International Society for Optical Engineering |
| Volume | 3006 |
| DOIs | |
| State | Published - 1997 |
| Externally published | Yes |
| Event | Optoelectronic Integrated Circuits - San Jose, CA, United States Duration: Feb 12 1997 → Feb 12 1997 |
ASJC Scopus Subject Areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Computer Science Applications
- Applied Mathematics
- Electrical and Electronic Engineering
Keywords
- Collimated sputter deposition
- Er-doped glass waveguides
- Lift-off process
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