Sputter deposited c-oriented LiNbO3 thin films on SiO2

S. Tan; T. Gilbert; C. Y. Hung; T. E. Schlesinger; M. Migliuolo

doi:10.1063/1.361407

Sputter deposited c-oriented LiNbO₃ thin films on SiO₂

S. Tan
, T. Gilbert
, C. Y. Hung
, T. E. Schlesinger
, M. Migliuolo

Research output: Contribution to journal › Article › peer-review

57 Scopus citations

Abstract

We present the development of a magnetron sputtering process for the fabrication of exclusively c-axis oriented LiNbO3 thin films on silicon substrates. The heterostructure consists of LiNbO3/Si3N4/SiO2/Si. The deposition of the Si3N4 film is key to obtaining exclusively c-oriented LiNbO3 thin films. The deposition conditions for the LiNbO3 are discussed.

Original language	English
Pages (from-to)	3548-3553
Number of pages	6
Journal	Journal of Applied Physics
Volume	79
Issue number	7
DOIs	https://doi.org/10.1063/1.361407
State	Published - Apr 1 1996
Externally published	Yes

ASJC Scopus Subject Areas

General Physics and Astronomy

Disciplines

Business

Access to Document

10.1063/1.361407

Cite this

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abstract = "We present the development of a magnetron sputtering process for the fabrication of exclusively c-axis oriented LiNbO3 thin films on silicon substrates. The heterostructure consists of LiNbO3/Si3N4/SiO2/Si. The deposition of the Si3N4 film is key to obtaining exclusively c-oriented LiNbO3 thin films. The deposition conditions for the LiNbO3 are discussed. ",

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AU - Migliuolo, M.

PY - 1996/4/1

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AB - We present the development of a magnetron sputtering process for the fabrication of exclusively c-axis oriented LiNbO3 thin films on silicon substrates. The heterostructure consists of LiNbO3/Si3N4/SiO2/Si. The deposition of the Si3N4 film is key to obtaining exclusively c-oriented LiNbO3 thin films. The deposition conditions for the LiNbO3 are discussed.

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